| PART |
Description |
Maker |
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh
2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG
SIEMENS A G
|
| HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 |
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| TC514400JL TC51440JL-10 TC51440JL-80 TC51440ZL-10 |
80 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
100 ns, 4-bit generation dynamic RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| Q67100-Q973 HYB514400BJ HYB514400BJ-50 HYB514400BJ |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
|
SIEMENS[Siemens Semiconductor Group]
|
| MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块（4米72位动态内存模块）
4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp.
NEC, Corp.
|
| IC41C8512 IC41LV8512 IC41LV8512-60TI IC41C8512-35K |
DYNAMIC RAM, EDO DRAM
512K x 8 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
